INFLUENCE OF SINTERING CONDITIONS ON RESISTANCE OF METALLIZATION FOR SILICON SOLAR CELLS

1 MOJROVÁ Barbora
Co-authors:
2 BUCK Thomas
Institutions:
1 Department of Microelectronic, Faculty of Electrical Engineering and Communication, Brno University of Technology, Technická 3058/10, 616 00 Brno, Czech Republic, EU, xmojro00@stud.feec.vutbr.cz
2 International Solar Energy Research Center Konstanz, Rudolf-Diesel-Straße 15, 78467, Konstanz, Germany, EU
Conference:
7th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 14th - 16th 2015
Proceedings:
Proceedings 7th International Conference on Nanomaterials - Research & Application
Pages:
249-254
ISBN:
978-80-87294-59-8
ISSN:
2694-930X
Published:
11th January 2016
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
10 views / 3 downloads
Abstract

Contact formation is one of the significant steps, which have to be optimized in the production of silicon solar cells with high efficiency based on N-type substrates. In this work a comparison of the effect of various sintering conditions on the contact formation process was done. Contacts were screen printed on passivated boron doped P+ emitters using two pastes for front-side metallization from different producers. Two different temperature profiles were compared at an atmospheric concentration of O2. The influence of the O2 concentration on resistance was investigated for one profile. Resistance changes during firing were measured simultaneously with the temperature using Rapid Thermal Processes (RTP) modified to in-situ resistance measurement.

Keywords: silicon solar cell, metallization, contacts formation
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