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Lithography is an important step during fabrication of the ordered nanostructures. To process large area, the selected fabrication method should have high throughput, while also being low-cost, this can be achieved by employing nanosphere lithography (NSL). The main idea of NSL, is to deposit single layer of spheres, which serves as a mask, through which the final nanostructure is etched out. The aim of this work is to demonstrate that NSL is a viable technique to fabricate GaN and InGaN triangular nanostructures as well as nanowires. Whole fabrication process consists of deposition of the polystyrene spheres, metal deposition to cover the whole sample and spheres lift-off to expose the material beneath. In the final step SiCl4/Ar plasma was used to finalize the triangular nanostructure, which can be further etched in an etchant to produce nanowires. It is necessary that for each step the optimal parameters are found to achieve reliable reproducibility. Whole fabrication process shall be characterized by electron microscope, cathodoluminescence spectroscopy and Energy-dispersive X-ray spectroscopy. Resulting nanostructures should have large surface area, which should be advantageous for applications in photocatalytic water splitting and other various applications depending on the material selected.
Keywords: Nanosphere lithography, Gallium nitride, Nanostructures© This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.