Open Access Conference Proceedings

Two-dimensional (2D) molybdenum disulfide (MoS2) synthesized by Chemical Vapor Deposition (CVD) is essential for scalable electronic and optoelectronic applications. We report a systematic study on the CVD synthesis of MoS2 layers on Si/SiO2 substrates using MoO3 and sulfur powder precursors in a two-zone furnace. This work investigates the influence of key parameters in CVD growth, including substrate orientation (horizontal and vertical), growth temperature, carrier gas flow rate, and pressure on the resulting growth, nucleation density, and flake morphology. Our characterization relies primarily on optical microscopy to analyze nucleation density, crystal domain size, and flake geometry. We demonstrate that slight variations dictate the transition from high-density, small-domain films to low-density, large-area single crystals, directly correlating synthesis conditions to the quality of the resulting 2D material. With the chosen parameter window, we obtain well-defined triangular domains consistent with a large area. We performed the Raman and photoluminescence (PL) spectroscopy measurements to confirm the growth of MoS2 layers. These morphological observations provide crucial insights into the underlying growth kinetics and offer a roadmap for the controlled synthesis of large areas. Our findings contribute to the optimization of scalable synthesis routes for high-quality MoS2 films for electronic and optoelectronic applications.

Keywords: Chemical vapor deposition, MoS2, optical microscopy, Raman spectroscopy, photoluminescence

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