THE ROLE OF MICROWAVE PLASMA TEMPERATURE DURING GRAPHENE NANOSHEETS DEPOSITION ON DIELECTRIC SUBSTRATE: MODELLING AND EXPERIMENT

1 KUBEČKA Martin
Co-authors:
1 TOMAN Jozef 1 ŠNÍRER Miroslav 1 JAŠEK Ondřej 1 KUDRLE Vít 1 JURMANOVÁ Jana
Institution:
1 Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlářská 2, 611 37, Brno, Czech Republic, kubecka@mail.muni.cz
Conference:
11th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 16th - 18th 2019
Proceedings:
Proceedings 11th International Conference on Nanomaterials - Research & Application
Pages:
80-84
ISBN:
978-80-87294-95-6
ISSN:
2694-930X
Published:
1st April 2020
Proceedings of the conference have been sent to Web of Science and Scopus for evaluation and potential indexing.
Metrics:
19 views / 9 downloads
Abstract

The relation between plasma temperature and properties of graphene nanosheet layer deposited on Si/SiO2 substrate by decomposition of ethanol in microwave plasma torch discharge at atmospheric pressure was investigated in dependence on delivered microwave power and gas flow rates. Plasma modelling was carried out using COMSOL Multiphysics software with delivered microwave power, gas flow rates and experimental reactor geometry as input parameters. Results of the heat flow and fluid dynamics modelling were compared with substrate temperature measured by thermocouple integrated in quartz tube substrate holder. The graphene nanosheets layer was characterized by SEM, Raman spectroscopy and 4-point probe method. The layers were severals tens of μm thick and their sheet resistance varied from 2 to 40 kΩ/sq. The properties of individual graphene nanosheets, 2D/G and D/G Raman band ratio, as well as the sheet resistance of their conductive network were correlated with the increase of plasma temperature with increasing microwave power. The substrate temperature increased linearly with delivered microwave power and the layer sheet resistance was decreasing with increasing microwave power and saturated at 2 kΩ/sq and D/G ratio of 0.6.

Keywords: Graphene, microwave plasma, temperature, dielectric substrate
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