INFLUENCE OF ELECTRON BEAM IRRADIATION ON PHYSICAL PROPERTIES OF MICROWAVE PLASMA SYNTHESIZED GRAPHENE NANOSHEETS

1 JURMANOVÁ Jana
Co-authors:
1 JAŠEK Ondřej 1 TOMAN Jozef 1 ŠNÍRER Miroslav 2 KALINA Michal
Institutions:
1 Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlářská 2, 611 37, Brno, Czech Republic, janar@physics.muni.cz
2 Institute of Physical and Applied Chemistry, Faculty of Chemistry, Brno University of Technology, Purkyňova 464/118, 61200, Brno, Czech Republic, kalina-m@fch.vut.cz
Conference:
11th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 16th - 18th 2019
Proceedings:
Proceedings 11th International Conference on Nanomaterials - Research & Application
Pages:
85-90
ISBN:
978-80-87294-95-6
ISSN:
2694-930X
Published:
1st April 2020
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
932 views / 556 downloads
Abstract

Scanning electron microscopy was used to determine physical properties of microwave plasma synthesized graphene nanosheets such as size and shape under various electron beam parameters (accelerating voltage, electron beam current, working distance). The stability and amount of defects of graphene nanosheets structure was investigated in dependence on these parameters and the results were compared to data obtained by TEM and Dynamic light scattering (DLS). Electron beam irradiation lead to change of nanosheets topography and defect formation was observed as well. The amorphization of the carbon nanostructure led to increase of intensity of D band (1360 cm-1) in Raman spectra. Contrary to electron beam irradiation damage the high temperature annealing, up to 800 °C, in Ar led to no observable changes.

Keywords: Graphene, electron microscopy, irradiation, structure

© This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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