QUANTUM DOT HETEROSTRUCTURES FOR SEMICONDUCTOR DEVICES

1,2,3 Ledentsov Nikolay
Institutions:
1 VI Systems GmbH, Hardenbergstr. 7, 10623 Berlin, Germany, nikolay.ledentsov@v-i-systems.com
2 Ioffe Institute of the RAS, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia
3 Academic University, Khlopin St. 8/3, St. Petersburg 195220, Russia
Conference:
11th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 16th - 18th 2019
Proceedings:
Proceedings 11th International Conference on Nanomaterials - Research & Application
Pages:
14-21
ISBN:
978-80-87294-95-6
ISSN:
2694-930X
Published:
1st April 2020
Proceedings of the conference have been sent to Web of Science and Scopus for evaluation and potential indexing.
Metrics:
37 views / 12 downloads
Abstract

“Quantum dot (QD)” or, other name, “quantum box”, represents an ultimate case of size quantization in solids, where the motion of the charge carriers is restricted in all three dimensions (3D). The critical condition for the formation of truly atom-like density states is a high quality of interfaces surrounding such nano-objects. Defects at interfaces and the related scattering and nonradiative recombination effects drastically reduce or even eliminate advantages of the 3D nanoobjects. Consequently, heteroepitaxial overgrowth became necessary before all the advantages of zero-dimensional electron spectrum in QDs were implemented both in core-shell colloidal QDs and in epitaxially-grown QD heterostructures.

Keywords: Quantum dot, semiconductor heterostructure, laser diode, LED, silicon photonics, cryptography, entanglement, nanoelectronics
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