In this work, we present fabrication and electrochemical characterization of bilayer doped diamond electrodes. The bilayers with different doping concentration have been fabricated by plasma enhanced chemical vapor deposition in two steps: namely an inner thick layer of highly boron doped diamond ([B] > 2∙1020 B atoms per cm-3) and an outer thin layer with a lower boron concentration. All samples were grown on electrically conductive silicon substrate using an ASTeX 5010 deposition system. Effect of the deposition time, i.e. the thickness and doping concentration of outer thin diamond layer on electrochemical properties of the diamond electrodes have been studied by cyclic voltammetry and impedance spectroscopy. This study is motivated by the objective to produce diamond electrode with both wide potential window and high electrical conductivity using a bilayer structure.Keywords: Bilayer diamond electrode, potential window, cyclic voltammetry, impedance spectroscopy
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