from the conferences organized by TANGER Ltd. provisional website
A large amount of microelectronic devices components are based on the unique properties of gallium nitride. Our purpose was to find the most effective and simple way for gallium nitride (GaN) nanoparticles synthesis. GaN nanoparticles were prepared by a gallium oxide powder – aluminium nanopowder (NP) mixture combustion process under air atmosphere and with the use of calorimetric bomb (under nitrogen atmosphere, P = 0.3 MPa). The aluminium nanopowder was obtained by electrical explosion process of aluminium wire in argon atmosphere. The GaN nanoparticles synthesis is based on the high – temperature chemical binding of nitrogen in the presence of oxygen impurities, which leads to the formation of stable crystal nitrides phases: AlN, GaN. The combustion process includes two stages, the first one (low – temperature) caused an absorption hydrogen burning (800 – 1200 °С), the second stage (high – temperature) leads to nitrides formation (2000 – 2400 °С).Keywords: aluminium nanopowder, gallium nitride
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