ALUMINIUM NANOPOWDER APPLICATION IN HIGH-TEMPERATURE SYNTHESIS OF GALLIUM NITRIDE

1 CHEREPANOVA Darya
Co-authors:
1 IL’IN Alexander
Institution:
1 Tomsk Polytechnic University, Tomsk, Russia, cher.darya.n@ya.ru
Conference:
9th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 18th - 20th 2017
Proceedings:
Proceedings 9th International Conference on Nanomaterials - Research & Application
Pages:
909-913
ISBN:
978-80-87294-81-9
ISSN:
2694-930X
Published:
8th March 2018
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
14 views / 5 downloads
Abstract

A large amount of microelectronic devices components are based on the unique properties of gallium nitride. Our purpose was to find the most effective and simple way for gallium nitride (GaN) nanoparticles synthesis. GaN nanoparticles were prepared by a gallium oxide powder – aluminium nanopowder (NP) mixture combustion process under air atmosphere and with the use of calorimetric bomb (under nitrogen atmosphere, P = 0.3 MPa). The aluminium nanopowder was obtained by electrical explosion process of aluminium wire in argon atmosphere. The GaN nanoparticles synthesis is based on the high – temperature chemical binding of nitrogen in the presence of oxygen impurities, which leads to the formation of stable crystal nitrides phases: AlN, GaN. The combustion process includes two stages, the first one (low – temperature) caused an absorption hydrogen burning (800 – 1200 °С), the second stage (high – temperature) leads to nitrides formation (2000 – 2400 °С).

Keywords: aluminium nanopowder, gallium nitride
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