DEVELOPMENT OF 100 NS WIDE BLUMLEIN TRANSMISSION LINE PULSE GENERATOR FOR: STUDY OF HIGH ELECTRIC FIELD PROPERTIES IN BORON-DOPED DIAMOND

1,2 LAMBERT Nicolas
Co-authors:
3 TREMOUILLES David 2 TAYLOR Andrew 4 HUBÍK Pavel 2 MORE-CHEVALIER Joris 2 BULIR Jiri 2,5 MORTET Vincent
Institutions:
1 Univ. Lille, Centrale Lille, UVHC, ISEN, LIA LICS/LEMAC - IEMN UMR CNRS 8520, Villeneuve d’Ascq, France, EU
2 Institute of Physics, Czech Academy of Sciences, v.v.i., Prague, Czech Republic, EU
3 Laboratoire d’Analyse et d’Architecture des Systèmes (LAAS), CNRS, Toulouse cedex, France, EU
4 Institute of Physics, Czech Academy of Sciences, Praha, Czech Republic, EU
5 Faculty of Biomedical Engineering, Czech Technical University in Prague, Kladno, Czech Republic, EU
Conference:
9th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 18th - 20th 2017
Proceedings:
Proceedings 9th International Conference on Nanomaterials - Research & Application
Pages:
924-929
ISBN:
978-80-87294-81-9
ISSN:
2694-930X
Published:
8th March 2018
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
652 views / 293 downloads
Abstract

Diamond can become highly conductive due to impurity impact ionization and avalanche effects when sufficiently doped with boron and exposed to high electric field. Knowledge of those effects is important for the fabrication of potential novel high power electronic devices. High currents and voltages make characterization of impurity impact ionization uneasy and require pulsed characterization measurement methods to limit thermal effects. In this work, we first present the synthesis of epitaxial boron doped diamond layers by Plasma Enhanced Chemical Vapour Deposition and their microfabrication process and then we study their electrical properties in high electric field. Second, we describe the home-made Transmission Line Pulse current-voltage (I-V) characterization setup based on a Blumlein pulse generator. Finally, quasi-static I-V characteristic has been measured showing impurity impact ionization and avalanche effect at high electric field.

Keywords: Impact ionization, Transmission Line Pulse generator, boron doped diamond, micro-technology

© This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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