from the conferences organized by TANGER Ltd. provisional website
Nitrogen incorporated organosilicon films were prepared by means of plasma enhanced chemical vapor deposition using capacitively coupled RF glow discharges in mixtures of hexamethyldisiloxane and nitrogen. The flow rate of nitrogen was 2-10 sccm and the flow rate of hexamethyldisiloxane was 0.3-0.4 sccm. The power supply of CCP was 50 W.The environmental stability of the deposited films was studied using confocal microscopy, spectroscopic ellipsometry and FTIR (Fourier Transform Infrared Spectroscopy). The humidity induced structure changes resulted in substantial change of mechanical properties of the studied films. The mechanical properties were studied using nanoindentation techniques.Keywords: plasma polymer films, plasma enhanced chemical vapor deposition, FTIR, nanoindentation
© This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.