OPTOELECTRICAL CHARACTERIZATION OF WELL ORIENTED N-TYPE ZNO NANOROD ARRAYS ON P-TYPE GAN TEMPLATES.

1 YATSKIV Roman
Co-authors:
1 GRYM Jan 1 SCHENK Antonin 1 VANIS Jan 1 ROESEL David 1 CHLUPOVA Sarka
Institution:
1 Institute of Photonics and Electronics of the CAS, Chaberska 57, 18251 Prague, Czech Republic, EU
Conference:
9th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 18th - 20th 2017
Proceedings:
Proceedings 9th International Conference on Nanomaterials - Research & Application
Pages:
787-791
ISBN:
978-80-87294-81-9
ISSN:
2694-930X
Published:
8th March 2018
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
14 views / 4 downloads
Abstract

A heterojunction formed between a single n-type ZnO nanorod and p-type GaN template was successfully prepared by low cost chemical bath deposition technique. Periodic circular patterns were fabricated by focused ion beam etching through poly(methyl methacrylate) mask to control the size, position, and periodicity of the ZnO nanorods. A possible growth mechanism is introduced to explain the growth process of the nanorods. Optical and electrical properties of the heterojunctions were investigated by low temperature photoluminescence spectroscopy and by the measurement of current-voltage (I-V) characteristics. The I-V characteristics were measured by directly contacting single ZnO nanorods with the conductive atomic force microscopy tip. The diode-like rectifying behavior was observed with a turn-on voltage of 2.3 V and the reverse breakdown voltage was 5 V.

Keywords: ZnO nanorods; focused ion beam; ZnO/GaN heterojunctions; photoluminescence spectroscopy; conductive atomic force microscopy.
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