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CHARACTERIZATION OF HYDROGENATED SILICON THIN FILMS AND DIODE STRUCTURES WITH INTEGRATED SILICON AND GERMANIUM NANOPARTICLES

1 STUCHLIK J.
Co-authors:
2 FAJGAR R. 1 REMES Z. 2,3 KUPCIK J. 1 STUCHLIKOVA H.
Institutions:
1 Czech Academy of Sciences, Institute of Physics, Praha, Czech Republic, EU, stuj@fzu.cz
2 Czech Academy of Sciences, Institute of Process Fundamentals, Praha, Czech Republic, EU
3 Czech Academy of Sciences, Institute of Inorganic Chemistry, Rez u Prahy, Czech Republic, EU
Conference:
9th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 18th - 20th 2017
Proceedings:
Proceedings 9th International Conference on Nanomaterials - Research & Application
Pages:
123-127
ISBN:
978-80-87294-81-9
ISSN:
2694-930X
Published:
8th March 2018
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
508 views / 177 downloads
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Abstract

P-I-N diode structures based on the thin films of amorphous hydrogenated silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique were prepared with embedded Si and Ge nanoparticles. The Reactive Laser Ablation (RLA) of germanium target was used to cover the intrinsic a-Si:H layer by Ge NPs under a low pressure of the silane. The RLA was performed using focused excimer ArF laser beam under SiH4 background atmosphere. Reaction between ablated Ge NPs and SiH4 led to formation of Ge NPs covered by thin GeSi:H layer. The deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes were alternated repeatedly. Volt-ampere characteristics of final diode structures were measured in dark and under illumination as well as their electroluminescence spectra.

Keywords: a-Si:H; PIN diode; thin films; reactive laser ablation; nanoparticles

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