PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE

1,2 GABLECH Imrich
Co-authors:
3,4 CAHA Ondřej 1,2 SVATOŠ Vojtěch 1,2 PRÁŠEK Jan 1,2 PEKÁREK Jan 1,2 NEUŽIL Pavel 1,5 ŠIKOLA Tomáš
Institutions:
1 Brno University of Technology, Central European Institute of Technology, Brno, Czech Republic
2 Brno University of Technology, Faculty of Electrical Engineering and Communication, SIX Centre, Department of Microelectronics, Brno, Czech Republic
3 Masaryk University, Central European Institute of Technology, Brno, Czech Republic
4 Masaryk University, Faculty of Science, Department of Condensed Matter Physics, Brno, Czech Republic
5 Brno University of Technology, Faculty of Mechanical Engineering, Institute of Physical Engineering, Brno, Czech Republic
Conference:
9th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 18th - 20th 2017
Proceedings:
Proceedings 9th International Conference on Nanomaterials - Research & Application
Pages:
117-122
ISBN:
978-80-87294-81-9
ISSN:
2694-930X
Published:
8th March 2018
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
33 views / 16 downloads
Abstract

We propose the sputtering deposition providing titanium thin films with controlled properties such as preferential crystallography and residual stress using Kaufman ion-beam source. The titanium thin films with thickness of ≈ 80 nm were deposited on [001] Si wafer covered by SiO2 deposited by plasma-enhanced chemical vapor deposition. To achieve the required crystallography and stress properties, we investigated the different beam voltage of Kaufman ion-beam source and controlled the substrate temperature during deposition using a built-in heater. We used two X-ray diffraction methods to determine the planes parallel to the sample surface and residual stress. We also measured the current-voltage curves to determine the resistivity (ρ) and the thermal coefficient of resistivity (α) of titanium thin films at different substrate temperatures using 4-probe measurement setup. We showed that it is possible to prepare stress-free titanium thin films with pure [001] orientation at the lowest beam voltage of 200 V and substrate temperature of ≈ 273 °C. The corresponding lattice parameters a0 and c0 were (2.954 ± 0.003) Å and (4.695 ± 0.001) Å, respectively. Electrical parameters of this sample as ρ and α were (9.2 ± 0.1)∙10-7 Ω∙m and (2.6 ± 0.2)∙10-3 K-1, respectively. We found out that these layers are well suitable for micro-electro-mechanical systems where the pure [001] orientation, no residual stress and low ρ and high α are essential. We found that ρ and α are dependent on each other. The ρ value was ≈ 2× higher than the bulk material value, which is an excellent result for a thin film with the thickness of ≈ 80 nm.

Keywords: titanium thin film, [001] orientation, stress-free, thermal coefficient of resistivity, resistivity
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