ELECTRICAL PROPERTIES OF NANOSCALE HETEROJUNCTIONS FORMED BETWEEN GAN AND ZNO NANORODS

1 TIAGULSKYI Stanislav
Co-authors:
1 YATSKIV Roman 1 GRYM Jan 1 SCHENK Antonín 1 ROESEL David 1 VANIŠ Jan 1 HAMPLOVA Marie
Institution:
1 Institute of Photonics and Electronics of the Czech Academy of Sciences, Chaberska 57, CZ-18251, Prague 8, Czech Republic
Conference:
9th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 18th - 20th 2017
Proceedings:
Proceedings 9th International Conference on Nanomaterials - Research & Application
Pages:
146-151
ISBN:
978-80-87294-81-9
ISSN:
2694-930X
Published:
8th March 2018
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
17 views / 4 downloads
Abstract

Vertical periodic arrays of ZnO nanorods are prepared by hydrothermal growth on GaN templates patterned by focused ion beam. Electro-physical properties of a single vertically-oriented ZnO nanorod are investigated by measuring the current-voltage characteristics using a nanoprobe in a scanning electron microscope. This technique enables to observe the surface morphology of ZnO nanorods simultaneously with their electrical characterization in vacuum. The vacuum chamber rejects the impact of gas adsorption and light irradiation, which both affect the properties of ZnO nanorods. Moreover, mechanical damage and strain induced during the nanorod transfer are eliminated. Nonlinear current-voltage characteristics under the forward bias are explained by the tunneling-recombination process and by the space charge limited current. The high reverse bias current in the p-n heterojunction is attributed to direct tunneling via a narrow tunnel barrier.

Keywords: Hydrothermal growth, nanoscale heterojunctions, in-situ current-voltage measurements, nanomanipulator, scanning electron microscope, ZnO/GaN heterojunction, ZnO nanorod.
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