from the conferences organized by TANGER Ltd. provisional website
The effect of negative differential resistance can be detected experimentally e.g. in some material systems based on polymers. These observations are sometimes explained being due to the presence of certain carrier traps which can capture the carriers of the electric current. In the present theoretical work we are going to show that besides of this carrier trapping, the origin of the negative differential resistance there can also be caused by an intrinsic mechanism. Namely, instead of the traps, the electron-phonon interaction can be expected to lead to a cooperation of atomic lattice vibrations with the charge carriers, when they tunnel between the localized states, which can in such a way provide the effect the negative differential resistance. A key feature in the present approach is that the electron-phonon interaction is included in a non-perturbative way. The theory will be briefly summarized and numerical calculations will be presented.Keywords: electron transfer, conductive polymer, nanostructures, quantum dots, negative differential resistance.