Originally, the e-beam lithography (EBL) is a technique for creating high-resolution black and white masks for the optical lithography. Multi-level relief structures can be also prepared using EBL patterning. Their preparation is based on the image patterning with a gradient of exposure doses. Large-area multi-level structures can be effectively prepared using the electron beam pattern generator with a variable shaped beam. We present several writing strategies. Basically, the main writing strategy uses one stamp (i.e. one elementary exposure of the shaped electron beam) per one elementary area with the same exposure dose. This simple approach is fast and flexible, however it does not guarantee optimal results. The main problem is an imperfection of the stamps (size, shape, and homogeneity). Advanced algorithms are based on multiple exposure of the same elementary area, the total local exposure dose is a sum of several different elementary exposures (stamps). Using these algorithms, a smoother surface of the structure can be achieved. On the other hand, the writing speed is considerably decreased. Tradeoff between the achieved parameters and the writing speed is discussed for selected set of writing strategy algorithms.Keywords: E-beam pattern generator; variable shaped beam; grayscale lithography; multi-level grating
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