ELECTRICAL AND OPTICAL PERFORMANCE OF INAS/ALSB/GASB SUPERLATTICE PHOTODETECTOR

1 HOSTUT Mustafa
Co-authors:
2 TANSEL Tunay 3 ERGUN Yuksel 3 KILIC Abidin 4 AYDINLI Atilla
Institutions:
1 Akdeniz University, Department of Second. Sch. Sci.& Math., Div. of Physics Education, Antalya, Turkey
2 University of Hacettepe, Nuclear Science Institute, Ankara, Turkey
3 University of Anadolu, Department of Physics, Eskisehir, Turkey
4 University of Bilkent, Department of Physics, Ankara, Turkey
Conference:
7th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 14th - 16th 2015
Proceedings:
Proceedings 7th International Conference on Nanomaterials - Research & Application
Pages:
255-259
ISBN:
978-80-87294-59-8
ISSN:
2694-930X
Published:
11th January 2016
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
11 views / 2 downloads
Abstract

We report on electrical and optical performance of InAs/AlSb/GaSb type-II superlattice photodetectors. The detector structure is designed to operate in the MWIR domain with a cut-off wavelength of 4.3 µm at 125 K. The photodiode exhibits a dark current density of 1 x 10-10 A/cm2 with a corresponding differential resistance area product (RoA) of 6 x 106 Ωcm2 at 77K and zero bias. We analysed dinamic resistance are product (RdA) vs inverse temperature curves in each operating temperature range. The results show that the SL photodiode reveals diffusion limited behaviour at high temperatures and becomes generation–recombination (GR) limited below 125 K. Such results are discussed with extracted minority carrier lifetimes from J–V curve fitting..

Keywords: Superlattice, dark current, detectivity, GaSb/InAs Infrared detectors
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