INFLUENCE OF UNDERLAYER ON CRYSTALLOGRAPHY AND ROUGHNESS OF ALUMINUM NITRIDE THIN FILM REACTIVELY SPUTTERED BY ION-BEAM KAUFMAN SOURCE

1,2 GABLECH Imrich
Co-authors:
1,2 SVATOŠ Vojtěch 1,2 PRÁŠEK Jan 1,2 HUBÁLEK Jaromír
Institutions:
1 Central European Institute of Technology, Brno University of Technology, Brno, Czech Republic, EU, imrich.gablech@ceitec.vutbr.cz
2 Brno University of Technology, Faculty of Electrical Engineering and Communication, Department of Microelectronics, Brno, Czech Republic, EU
Conference:
7th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 14th - 16th 2015
Proceedings:
Proceedings 7th International Conference on Nanomaterials - Research & Application
Pages:
89-93
ISBN:
978-80-87294-59-8
ISSN:
2694-930X
Published:
11th January 2016
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
16 views / 5 downloads
Abstract

This paper deals with deposition of aluminum nitride layer on different underlayers namely silicon (100), amorphous thermal silicon dioxide, and titanium (001). The aluminum nitride layer was deposited using 3grid radio frequency inductive coupled plasma (RFICP) Kaufman ion-beam source which provides slow deposition rate with low energy of plasma ions. This possibility leads to high homogeneity and very smooth surface. Titanium layer was deposited by argon plasma at low energy of 200 eV to attain the highly oriented c-axis layer. The aluminum nitride was sputtered on substrate which was heated to 350 °C. The nitrogen plasma only at energy of 500 eV was used. It was observed the aluminum nitride deposited on thermal silicon dioxide has the highest root mean square of roughness (RRMS) = 1.49 nm and the lowest intensity of X-ray diffraction in Bragg-Brentano focusing geometry (XRD–BB). The aluminum nitride deposited on silicon (100) shows higher intensity of XRD–BB and the lowest RRMS = 0.48 nm. Although the RRMS = 0.66 nm of aluminum nitride thin film deposited on titanium (001) underlayer was obtained, the highest intensity of XRD–BB was observed. Azimuthally averaged intensity of pole figures obtained using parallel beam setup represents the information about misorientation of individual crystallites. These analyses were performed for aluminum nitride layers deposited on titanium (001) film and silicon (100) wafer. Misorientation determined from full width at half maximum (FWHM) of the pole figures was of about 0.5° lower for aluminum nitride thin film deposited on titanium underlayer than one deposited directly on silicon substrate without silicon dioxide.

Keywords: Aluminum Nitride, Titanium, c-axis orientation, Kaufman ion-beam source, reactive sputtering, AFM, XRD
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