INFLUENCE OF THE NUCLEATION PROCESS ON THE PROPERTIES OF BORON DOPED DIAMOND FILMS DEPOSITED ON STRUCTURED SILICON

1 BEHÚL Miroslav
Co-authors:
1 VOJS Marian 1 MICHNIAK Pavol 1 MARTON Marián 1 ŘEHÁČEK Vlastimil 2 WANG Dong 2 HERZ Andreas 2 SCHAAF Peter 1 REDHAMMER Robert
Institutions:
1 Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovak Republic, miroslav.behul@stuba.sk
2 Institute of Materials Engineering and Institute of Micro and Nanotechnologies MacroNano®, TU Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau, Germany
Conference:
7th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 14th - 16th 2015
Proceedings:
Proceedings 7th International Conference on Nanomaterials - Research & Application
Pages:
85-88
ISBN:
978-80-87294-59-8
ISSN:
2694-930X
Published:
11th January 2016
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
38 views / 14 downloads
Abstract

We report here on the preparation and characterization of polycrystalline boron doped diamond (BDD) thin films grown on structured silicon substrates using hot filament chemical vapor deposition (HFCVD) method. The BDD layers were grown in CH4 / H2 gas mixture with trimethylboron (TMB) addition. Before diamond depositions, different nucleation processes were applied (diamond nanoparticles in deionized water or methanol, with/without oxygen plasma treatment). Layers with thicknesses from 0.2 to 1 μm were deposited at varied ratios of B / C and CH4 / H2 in the CH4 / H2 / TMB gas mixture. Scanning electron microscopy (SEM) was used to analyze the samples. Oxygen plasma pretreatment was found as crucial for successful coating of the whole silicon pillars by diamond film including the bottom part. For some of the pretreatment methods (i.e. short nucleation time, < 5min), the HFCVD process resulted in formation of BDD caps on the top of silicon pillars.

Keywords: Boron doped diamond, reactive ion etching, black silicon, chemical vapor deposition
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