GROWTH OF SILICON NANOWIRES BY THERMAL ANNEALING OF THICK GOLD CATALYTIC LAYER ON SILICON SUBSTRATE UNDER DIFFERENT ATMOSPHERES

1 ŠPERKA Jiří
Co-authors:
1,2 JAŠEK Ondřej 2 HAVEL Josef 1,2 ZAJÍĆKOVÁ Lenka
Institutions:
1 Masaryk University, The Central European Institute of Technology (CEITEC), Kamenice 5, Brno, Czech Republic
2 Masaryk University, Faculty of Science, Kotlářská 2, Brno, Czech Republic
3 Masaryk University, Faculty of Science, Kamenice 5/A14, Brno, Czech Republic
Conference:
7th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 14th - 16th 2015
Proceedings:
Proceedings 7th International Conference on Nanomaterials - Research & Application
Pages:
79-84
ISBN:
978-80-87294-59-8
ISSN:
2694-930X
Published:
11th January 2016
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
19 views / 7 downloads
Abstract

Silicon nanowires (Si NWs) were grown from Si wafer upon thermal annealing in the presence of catalytic gold layer. The Si substrate coated with 100 nm thick Au sputtered layer was thermally annealed at 1000 °C for 60 min in argon and hydrogen atmosphere at 8 kPa. The influence of argon and hydrogen atmospheres on the growth of Si NWs was investigated. It was found that by using the hydrogen atmosphere we were able to grow Si NWs, while the growth in argon atmosphere was sporadic. The catalytic layer morphology and composition were examined using atomic force microscopy and laser desorption-ionization time of flight mass spectrometry, while nanowire structure was observed through scanning electron microscope and energy dispersive X-ray spectroscopy.

Keywords: Nanowires, Silicon, Gold, Eutectics, Surface processes.
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