TECHNOLOGICAL CHALLENGES IN THE FABRICATION OF MOS2/DIAMOND HETEROSTRUCTURES

1,2 VARGA Marian
Co-authors:
1 SOJKOVA Michaela 1,3 HRDA Jana 1 HUTAR Peter 1,3 PARSA SAEB Saviz 1 VANKO Gabriel 1 PRIBUSOVA SLUSNA Lenka 2 ONDIC Lukas 2 FAIT Jan 2 KROMKA Alexander 1 HULMAN Martin
Institutions:
1 Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia, EU
2 Institute of Physics, Czech Academy of Sciences, Prague, Czech Republic, EU
3 Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava, Slovakia, EU
Conference:
14th International Conference on Nanomaterials - Research & Application, OREA Congress Hotel Brno, Czech Republic, EU, October 19 - 21, 2022
Proceedings:
Proceedings 14th International Conference on Nanomaterials - Research & Application
Pages:
21-27
ISBN:
978-80-88365-09-9
ISSN:
2694-930X
Published:
23rd November 2022
Proceedings of the conference have already been published in Scopus and we are waiting for evaluation and potential indexing in Web of Science.
Metrics:
487 views / 364 downloads
Abstract

Nowadays, 2D materials are one of the most studied classes of materials. In addition to the most famous graphene, progress has been achieved in studying and using fundamental properties of transition metal dichalcogenides (TMD). Complementary, diamond as a representative of 3D materials has gained a reputation as an extremely versatile material due to its extraordinary combination of physical/chemical/electrical/optical properties. Besides these particular forms of 2D and 3D materials, their heterostructures have become very attractive due to new phenomena and functions (bandgap engineering, enhanced charge transport, optical interaction, etc.). However, individual technological procedures are still minimally investigated and described. Here, we will demonstrate a proof-of-concept for the preparation of MoS2/diamond heterostructures, where two different strategies were employed: a) growth of MoS2 layers on diamond films, and b) growth of diamond films on Si/MoS2 substrates. Considering the growth conditions for MoS2 and diamond materials, heterostructures based on MoS2 on diamond can be prepared more easily. Regardless of the diamond film's morphology, the grown MoS2 layer simply copies the diamond surface and does not damage the diamond film. However, the heterostructure in the configuration of diamond on MoS2 is a highly challenging task. It was found experimentally that the combination of deposition temperature and aggressive chemical-plasma environment during diamond growth places high demands on the resistance and stability of MoS2 layers.

Keywords: Transition metal dichalcogenides, diamond, heterostructures, chemical vapor deposition

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