CHARACTERIZATION OF THE VERY LOW CONTACT RESISTANCE ON HEAVILY BORON DOPED (113) CVD DIAMOND

1 VOVES Jan
Co-authors:
1 LAPOSA Alexandr 2 ŠOBÁŇ Zbyněk 1 HAZDRA Pavel 1 POVOLNÝ Vojtěch 2,3 MORTET Vincent 1,2 LAMBERT Nicolas 2 DAVYDOVA Marina
Institutions:
1 Faculty of Electrical Engineering, Czech Technical University in Prague, Prague, Czech Republic, EU, voves@fel.cvut.cz
2 Institute of Physics of the Czech Academy of Sciences, Prague, Czech Republic, EU, mortet@fzu.cz
3 Faculty of Biomedical Engineering, Czech Technical University in Prague, Kladno, Czech Republic, EU
Conference:
13th International Conference on Nanomaterials - Research & Application, Orea Congress Hotel Brno, Czech Republic, EU, October 20 - 22, 2021
Proceedings:
Proceedings 13th International Conference on Nanomaterials - Research & Application
Pages:
47-52
ISBN:
978-80-88365-00-6
ISSN:
2694-930X
Published:
22nd November 2021
Proceedings of the conference have already been published in Scopus and we are waiting for evaluation and potential indexing in Web of Science.
Metrics:
238 views / 98 downloads
Abstract

The low resistance of ohmic contacts on diamond layers is important for the fabrication of diamond power electronic devices with fast switching capabilities for future high voltage applications. The low barrier height between the metal and diamond, high level of boron doping and annealing at elevated temperatures are the most critical parameters to reach the lowest contact resistivity. In this work, we report on titanium/gold ohmic contacts prepared on the heavily boron-doped (113) epitaxial diamond layers. The contact resistance has been characterized by the Circular Transmission Line Model (cTLM) structures. We used the analytical model of field enhanced emission, tunneling and the image force influence including Fermi level position dependence on the boron concentration for theoretical Ti/Au contact analysis and the Silvaco TCAD 2D simulation to estimate the measurement error associated with the nonzero metal resistance. We show that the resulting simulation values are consistent with the experimental results.

Keywords: Diamond, ohmic contacts, power devices, TCAD simulation

© This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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