GENERAL OVERVIEW OF GAN DEVICES AND TRANSPORT PROPERTIES OF ALGAN/GAN HEMT STRUCTURES - IMPACT OF DISLOCATION DENSITY AND IMPROVED DESIGN

1 HULICIUS Eduard
Co-authors:
1,2 HÁJEK František 1 HOSPODKOVÁ Alice 1 HUBÍK Pavel 1 GEDEONOVÁ Zuzana 1 HUBÁČEK Tomáš 1 PANGRÁC Jiří 1 KULDOVÁ Karla
Institutions:
1 Institute of Physics CAS, v.v.i., Prague, Czech Republic, EU, hulicius@fzu.cz
2 Faculty of Nuclear Sciences and Physical Engineering, CTU in Prague, Czech Republic, EU
Conference:
13th International Conference on Nanomaterials - Research & Application, Orea Congress Hotel Brno, Czech Republic, EU, October 20 - 22, 2021
Proceedings:
Proceedings 13th International Conference on Nanomaterials - Research & Application
Pages:
17-22
ISBN:
978-80-88365-00-6
ISSN:
2694-930X
Published:
22nd November 2021
Proceedings of the conference have already been published in Scopus and we are waiting for evaluation and potential indexing in Web of Science.
Metrics:
181 views / 94 downloads
Abstract

GaN-based nanostructures are used for many present semiconductor devices. The main topics are structures for blue LEDs and LDs, but there are also other interesting and important GaN devices namely for power electronics, scintillators and detectors as well as High Electron Mobility Transistors (HEMT). Several of our previous NANOCON contributions were devoted to the scintillator and detector structures; one was a description of optimization of HEMT structures and their growth parameters.

Keywords: GaN devices, HEMT, MOVPE epitaxy, dislocation

© This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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