GENERAL OVERVIEW OF GAN DEVICES AND TRANSPORT PROPERTIES OF ALGAN/GAN HEMT STRUCTURES - IMPACT OF DISLOCATION DENSITY AND IMPROVED DESIGN
1,2 HÁJEK František
1 HOSPODKOVÁ Alice
1 HUBÍK Pavel
1 GEDEONOVÁ Zuzana
1 HUBÁČEK Tomáš
1 PANGRÁC Jiří
1 KULDOVÁ Karla
Institute of Physics CAS, v.v.i., Prague, Czech Republic, EU, email@example.com
Faculty of Nuclear Sciences and Physical Engineering, CTU in Prague, Czech Republic, EU
Proceedings 13th International Conference on Nanomaterials - Research & Application
22nd November 2021
Proceedings of the conference have already been published in Scopus and we are waiting for evaluation and potential indexing in Web of Science.
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GaN-based nanostructures are used for many present semiconductor devices. The main topics are structures for blue LEDs and LDs, but there are also other interesting and important GaN devices namely for power electronics, scintillators and detectors as well as High Electron Mobility Transistors (HEMT). Several of our previous NANOCON contributions were devoted to the scintillator and detector structures; one was a description of optimization of HEMT structures and their growth parameters.
GaN devices, HEMT, MOVPE epitaxy, dislocation
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