ANODIC FORMATION OF HFO2 NANOSTRUCTURE ARRAYS FOR RESISTIVE SWITCHING APPLICATION

1 KAMNEV Kirill
Co-authors:
2 PYTLÍČEK Zdeněk 3 PRÁŠEK Jan 4 MOZALEV Alexander
Institution:
1 CEITEC - Central European Institute of Technology, Brno University of Technology, Brno, Czech Republic, EU kirill.kamnev@ceitec.vutbr.cz
Conference:
12th International Conference on Nanomaterials - Research & Application, Brno, Czech Republic, EU, October 21 - 23, 2020
Proceedings:
Proceedings 12th International Conference on Nanomaterials - Research & Application
Pages:
122-126
ISBN:
978-80-87294-98-7
ISSN:
2694-930X
Published:
28th December 2020
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
1049 views / 363 downloads
Abstract

Thin dielectric films are actively investigated as materials for novel resistive random-access memories based on resistive switching effect in metal/insulator/metal structures. Thin HfO2 films are of particular interest due to the high thermal stability, low operating voltages of resulting devices, and complementary metal-oxide-semiconductor technology compatibility of this material. In this study, we investigate the resistive switching behavior of nanostructured HfO2 film embedded in a porous anodic alumina matrix. The film was synthesized via self-organized electrochemical anodizing of a sputter-deposited Al/Hf bilayer on a Si substrate in an oxalic acid solution. The film was investigated by scanning electron microscopy. Simple metal/insulator/metal devices were prepared by sputter-deposition of Pt top electrodes through a shadow mask onto the nanostructured film. Assembled devices were characterized by I-V measurements. A bipolar eight-wise resistive switching was obtained, demonstrating a highly repeatable and stable low-voltage behavior in a set potential range. The achieved results indicate the high potential of the anodizing technique as an alternative to commonly used methods for producing insulating thin films for resistive random-access memory application.

Keywords: Rresistive switching, anodizing, hafnium oxide, porous anodic alumina, memristor

© This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Scroll to Top