EFFECT OF THE SUBSTRATE CRYSTALLINE ORIENTATION ON THE SURFACE MORPHOLOGY AND BORON INCORPORATION INTO EPITAXIAL DIAMOND LAYERS

1 Voves Jan
Co-authors:
1 Pošta Alexandr 2 Davydova Marina 1 Laposa Alexandr 1 Povolný Vojtěch 1 Hazdra Pavel 1,2 Lambert Nicolas 2 Sedlaková Silvia 2,3 Mortet Vincent
Institutions:
1 Faculty of Electrical Engineering, Czech Technical University in Prague, Prague, Czech Republic, EU, voves@fel.cvut.cz
2 Institute of Physics of the Czech Academy of Sciences, Prague 8, Czech Republic, EU, mortet@fzu.cz
3 Faculty of Biomedical Engineering, Czech Technical University in Prague, Kladno, Czech Republic, EU
Conference:
12th International Conference on Nanomaterials - Research & Application, Brno, Czech Republic, EU, October 21 - 23, 2020
Proceedings:
Proceedings 12th International Conference on Nanomaterials - Research & Application
Pages:
98-102
ISBN:
978-80-87294-98-7
ISSN:
2694-930X
Published:
28th December 2020
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
157 views / 73 downloads
Abstract

Epitaxial growth of diamond is critically important for the fabrication of diamond-based electronic devices. The emerging study of the epitaxial diamond growth on the (113) vicinal surfaces evidences highly needed high growth rates and low structural defects concentrations with both p and n-type doping. In this work, we compare the morphology and dopant concentration incorporation of heavily boron-doped (113) epitaxial diamond layers with conventionally studied (100) and (111) epitaxial layers. Epitaxial layers were grown using resonance cavity Microwave Plasma Enhanced Chemical Vapor Deposition (MWPECVD) system. The surface morphology of epitaxial layers was studied by optical microscopy and atomic force microscopy, whereas the boron incorporation homogeneity was determined by Raman spectroscopy mapping. Heavily boron-doped (113) epitaxial diamond layers can be grown at a high growth rate with a smooth surface, without pyramidal hillocks or non-epitaxial crystallite defects, and with homogeneous boron concentration. These results confirm that epitaxial diamond growth on (113) vicinal surfaces is a promising solution for the development and fabrication of diamond-based electronic devices.

Keywords: Diamond, epitaxy, defects, boron doping, Raman mapping

© This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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