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GERMANIUM AND TIN NANOPARTICLES ENCAPSULATED IN AMORPHOUS SILICON MATRIX FOR OPTOELECTRONIC APPLICATIONS

1 STUCHLIKOVA The Ha
Co-authors:
1 REMES Zdenek 1 STUCHLIK Jiri
Institution:
1 Czech Academy of Sciences, Institute of Physics, Praha, Czech Republic, hotheha@fzu.cz, remes@fzu.cz, stuj@fzu.cz
Conference:
10th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 17th - 19th 2018
Proceedings:
Proceedings 10th International Conference on Nanomaterials - Research & Application
Pages:
226-229
ISBN:
978-80-87294-89-5
ISSN:
2694-930X
Published:
28th February 2019
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
465 views / 162 downloads
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Abstract

The plasma enhanced chemical vapour deposition was combined with in situ deposition of Ge and Sn thin film by evaporation technique at surface temperature about 220 °C to form nanoparticles on the surface of hydrogenated silicon thin films to prepare diodes. Formation of nanoparticles was additionally stimulated by plasma treatment through a low pressure hydrogen glow discharge. The diodes based on PIN diode structures with and without the embedded Ge or Sn nanoparticles were characterized by temperature dependence of electrical conductivity, activation energy of conductivity, measurement of volt-ampere characteristics in dark and under solar illumination.

Keywords: a-Si:H, Ge NPs, Sn NPs, diode structures, I-V characteristics

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