from the conferences organized by TANGER Ltd. provisional website
GaN/AlGaN-based high electron mobility transistors (HEMTs) attain better performance than their state-of-the-art full silicon-based counterparts, offering higher power, higher frequency as well as higher temperature of operation and stability, although their voltage and current limits are somewhat lower than for the SiC-based HEMTs. GaN/AlGaN-based HEMTs are a potential choice for electric-powered vehicles, for which they are approved not only for their power parameters, but also for their good temperature stability, lifetime and reliability. It is important to optimize HEMT structures and their growth parameters to reach the optimum function for the real-world applications.HEMT structures described and discussed here were grown by MOVPE technology in AIXTRON apparatus on (111)-oriented single-surface polished 6" Si substrates.Structural, optical and transport properties of the structures were measured by X-ray diffraction, optical reflectivity, time-resolved photoluminescence and μ-Raman spectroscopy.Keywords: HEMT, MOVPE, nitrides, quantum well
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