MOVPE GAN/ALGAN HEMT NANO-STRUCTURES

1 Hulicius Eduard
Co-authors:
1 Kuldová Karla 1 Hospodková Alice 1 Pangrác Jiří 1 Dominec Filip 2 Humlíček Josef 1 Pelant Ivan 1 Cibulka Ondřej 1 Herynková Kateřina
Institutions:
1 Institute of Physics CAS, v.v.i., Cukrovarnická 10, Praha 6, 162 00, Czech Republic, EU, hulicius@fzu.cz
2 Masaryk University Cent. Europ. Inst. of Technol, Kotlářská 2, Brno 61137, Czech Republic, EU
Conference:
10th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 17th - 19th 2018
Proceedings:
Proceedings 10th International Conference on Nanomaterials - Research & Application
Pages:
30-35
ISBN:
978-80-87294-89-5
ISSN:
2694-930X
Published:
28th February 2019
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
45 views / 22 downloads
Abstract

GaN/AlGaN-based high electron mobility transistors (HEMTs) attain better performance than their state-of-the-art full silicon-based counterparts, offering higher power, higher frequency as well as higher temperature of operation and stability, although their voltage and current limits are somewhat lower than for the SiC-based HEMTs. GaN/AlGaN-based HEMTs are a potential choice for electric-powered vehicles, for which they are approved not only for their power parameters, but also for their good temperature stability, lifetime and reliability. It is important to optimize HEMT structures and their growth parameters to reach the optimum function for the real-world applications.HEMT structures described and discussed here were grown by MOVPE technology in AIXTRON apparatus on (111)-oriented single-surface polished 6" Si substrates.Structural, optical and transport properties of the structures were measured by X-ray diffraction, optical reflectivity, time-resolved photoluminescence and μ-Raman spectroscopy.

Keywords: HEMT, MOVPE, nitrides, quantum well
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