NANOPATTERNING OF SILICON NITRIDE MEMBRANES

1 MATĚJKA Milan
Co-authors:
1 KRÁTKÝ Stanislav 1 ŘIHÁČEK Tomáš 1 KOLAŘÍK Vladimír 1 CHLUMSKÁ Jana 1,2 URBÁNEK Michal
Institutions:
1 Institute of Scientific Instruments of the CAS, Brno, Czech Republic, EU, milan.matejka@isibrno.cz
2 Tomas Bata University in Zlin, Centre of Polymer Systems, Zlin, Czech Republic, EU
Conference:
8th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 19th - 21st 2016
Proceedings:
Proceedings 8th International Conference on Nanomaterials - Research & Application
Pages:
709-714
ISBN:
978-80-87294-71-0
ISSN:
2694-930X
Published:
17th March 2017
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
19 views / 6 downloads
Abstract

Membranes are typically created by a thin silicon nitride (SIN) layer deposited on a silicon wafer. Both, top and bottom side of the wafer is covered by a thin layer of the silicon nitride. The principle of silicon nitride membranes preparation is based on the wet anisotropic etching of the bottom side of the silicon wafer with crystallographic orientation (100). While the basic procedure for the preparation of such membranes is well known, the nano patterning of thin membranes presents quite important challenges. This is partially due to the mechanical stress which is typically presented within such membranes. The resolution requirements of the membrane patterning have gradually increased. Advanced lithographic techniques and etching procedures had to be developed. This paper summarizes theoretical aspects, technological issues and achieved results. The application potential of silicon nitride membranes as a base for multifunctional micro system (MMS) is also discussed.

Keywords: E-beam writer; silicon nitride membranes; nano patterning; anisotropic etching
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