SIMULATION OF EPITAXIALLY GROWN GRAPHENE ON STEP-SHAPED SIC SURFACE

1 BARULIN Aleksei
Co-authors:
1 ŠMARHÁK Jiří 1 VOVES Jan
Institution:
1 Czech Technical University in Prague, Faculty of Electrical Engineering,Technická 2, CZ-16627 Prague 6, Czech Republic, EU, smarhjir@fel.cvut.cz
Conference:
8th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 19th - 21st 2016
Proceedings:
Proceedings 8th International Conference on Nanomaterials - Research & Application
Pages:
110-115
ISBN:
978-80-87294-71-0
ISSN:
2694-930X
Published:
17th March 2017
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
31 views / 14 downloads
Abstract

In this study we present calculation of molecular mechanic and electronic transport properties of epitaxially grown graphene on step-shaped SiC substrate. We simulated two types of structural arrangements. The first structure, simulated mainly for purposes of comparisson, is planar SiC with graphene bilayer. The second structure is step-shaped SiC with graphene monolayer. We analyzed effects of hydrogenization of the SiC surface and conducted a series of calculations adressing shape of the resulting graphene layers. Finally, we calculated transmission spectrum and I/V curve of resulting structures.

Keywords: First principle simulation, SiC, graphene
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