from the conferences organized by TANGER Ltd. provisional website
In this study we present calculation of molecular mechanic and electronic transport properties of epitaxially grown graphene on step-shaped SiC substrate. We simulated two types of structural arrangements. The first structure, simulated mainly for purposes of comparisson, is planar SiC with graphene bilayer. The second structure is step-shaped SiC with graphene monolayer. We analyzed effects of hydrogenization of the SiC surface and conducted a series of calculations adressing shape of the resulting graphene layers. Finally, we calculated transmission spectrum and I/V curve of resulting structures.Keywords: First principle simulation, SiC, graphene
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