from the conferences organized by TANGER Ltd. provisional website
AIII nitrides are crucial materials for current micro- and opto-electronic devices. We present a the simple and scalable synthesis of AIII nitrides including gallium nitride and indium nitride nanoparticles by rapid thermal decomposition of complex gallium fluoride precursors in ammonia atmosphere. The obtained nanoparticles exhibit disc like morphology and are obtained by precursor decomposition within several minutes at high temperatures. The obtained nanoparticles were characterized by SEM, XRD and Raman spectroscopy. The structural characterization shows the presence of defects like nitrogen vacancies within nitride nanoparticles. The magnetic measurements show a paramagnetic behaviour induced by defects. Nanocrystalline GaN was used for preparation of gallium nitride ceramics which was characterized in detail by X-ray diffraction, SEM and TEM microscopy as well as transport measurement.Keywords: AIII Nitrides; Nanoparticles; Ammonolysis; Gallium nitride
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