SYNTHESIS OF AIII NITRIDES NANOPARTICLES BY AMMONOLYSIS OF COMPLEX FLUORIDE PRECURSORS

1 KLÍMOVÁ Kateřina
Co-authors:
1 BOUŠA Daniel 1 HUBER Štěpán 1 LUXA Jan 1 SEDMDUBSKÝ David 2 MARYŠKO Miroslav 2 BRÁZDA Petr 1 SOFER Zdeněk
Institutions:
1 University of Chemistry and Technology Prague, Dept. of Inorganic Chemistry, Technicka 5, 166 28 Prague 6, Czech Republic, Katerina.Klimova1@vscht.cz
2 Institute of Physics of the ASCR, v.v.i., Cukrovarnická 112/10, 162 00 Prague 6, Czech Republic
Conference:
8th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 19th - 21st 2016
Proceedings:
Proceedings 8th International Conference on Nanomaterials - Research & Application
Pages:
182-188
ISBN:
978-80-87294-71-0
ISSN:
2694-930X
Published:
17th March 2017
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
17 views / 7 downloads
Abstract

AIII nitrides are crucial materials for current micro- and opto-electronic devices. We present a the simple and scalable synthesis of AIII nitrides including gallium nitride and indium nitride nanoparticles by rapid thermal decomposition of complex gallium fluoride precursors in ammonia atmosphere. The obtained nanoparticles exhibit disc like morphology and are obtained by precursor decomposition within several minutes at high temperatures. The obtained nanoparticles were characterized by SEM, XRD and Raman spectroscopy. The structural characterization shows the presence of defects like nitrogen vacancies within nitride nanoparticles. The magnetic measurements show a paramagnetic behaviour induced by defects. Nanocrystalline GaN was used for preparation of gallium nitride ceramics which was characterized in detail by X-ray diffraction, SEM and TEM microscopy as well as transport measurement.

Keywords: AIII Nitrides; Nanoparticles; Ammonolysis; Gallium nitride
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