AlN is a very perspective substrate material for AIIIN semiconductor growth. The AlN growth was performed in horizontal RF heated MOVPE reactor using trimethylaluminium (TMAl) and ammonia. The influence of V/III ratio and carrier gas composition on the structure and morphology of the layers were investigated. A significant effect of V/III ratio on layer structure and morphology was observed. High V/III ratio led to deterioration of surface morphology due to the pre-reaction of precursors in the gas phase. A positive effect of high nitrogen concentration in the carrier gas on the surface morphology was observed. Finally the influence of substrate treatment by high temperature annealing in ammonia atmosphere (nitridation) as well as deposition of low temperature buffer layer on the properties of deposited layers were investigated. The results show crucial importance of substrate nitridation on the layer structural and morphological properties. Also the low temperature buffer layer of AlN significantly improves the quality of the layer.Keywords: AIII Nitrides; Aluminum nitride; MOVPE; Thin films
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