THE DEPOSITION OF GERMANIUM NANOPARTICLES ON HYDROGENATED AMORPHOUS SILICON

1 STUCHLIK Jiří
Co-authors:
2 VOLODIN Vladimir A. 2 SHKLYAEV Alexander A. 1 STUCHLIKOVA The Ha 1 LEDINSKÝ Martin 1 ČERMÁK Jan 3,4 KUPČÍK Jaroslav 3 FAJGAR Radek 1,5 MORTET Vincent 1 MORE-CHEVALIER Joris 1 ASHCHEULOV Petr 1 PURKRT Adam 1,5 REMES Zdenek
Institutions:
1 Institute of Physics CAS, Praha, Czech Republic, EU, stuj@fzu.cz
2 Novosibirsk State University, Novosibirsk, Russian Federation
3 Institute of Chemical Process Fundamentals CAS, Praha, Czech Republic, EU
4 Institue of Inorganic Chemistry CAS, Rez u Prahy, Czech Republic, EU
5 Faculty of Biomedical Engineering CTU in Prague, Kladno, Czech Republic, EU
Conference:
8th International Conference on Nanomaterials - Research & Application, Hotel Voronez I, Brno, Czech Republic, EU, October 19th - 21st 2016
Proceedings:
Proceedings 8th International Conference on Nanomaterials - Research & Application
Pages:
133-137
ISBN:
978-80-87294-71-0
ISSN:
2694-930X
Published:
17th March 2017
Proceedings of the conference were published in Web of Science and Scopus.
Metrics:
28 views / 9 downloads
Abstract

We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 °C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.

Keywords: Ge nanoparticles, a-Si:H, PECVD, MBE
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